Title :
Recovery of low temperature electron trapping in AlGaAs/InGaAs PM-HEMTs due to impact-ionization
Author :
Meneghesso, Gaudenzio ; De Bortoli, Eros ; Paccagnella, Alessandro ; Zanoni, Enrico ; Canali, Claudio
Author_Institution :
Dipartimento di Elettronica e Inf., Padova Univ., Italy
fDate :
7/1/1995 12:00:00 AM
Abstract :
The dc behavior of AlGaAs/InGaAs PM-HEMTs has been Investigated at a low temperature. Two different failure modes have been identified according to bias conditions, consisting of: (a) a dramatic collapse in the drain current I/sub D/, and (b) a considerable shift in the threshold voltage V/sub T/. I/sub D/ decrease is due to trapping of electrons in deep levels in the gate-drain region, while trapping under the gate is responsible for V/sub T/ shift. At high V/sub DS/ a recovery of the dc device characteristics is observed, due to impact-ionization phenomena.<>
Keywords :
aluminium compounds; deep levels; electron traps; failure analysis; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; semiconductor device reliability; AlGaAs-InGaAs; DC behavior; PM-HEMTs; bias conditions; dc device characteristics; deep levels; drain current; failure modes; gate-drain region; impact-ionization phenomena; low temperature electron trapping; pseudomorphic devices; threshold voltage; Degradation; Electron mobility; Electron traps; Gallium arsenide; Indium gallium arsenide; Irrigation; Manufacturing; Stress measurement; Temperature; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
