Title :
Sub-milliampere single-quantum-well InGaAs-GaAs-AlGaAs addressable laser arrays
Author :
Zhao, Hanmin ; Cheng, Yong ; MacDougal, Michael H. ; Yang, Gye-Mo ; Dapkus, P.Daniel
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
Strained-quantum-well InGaAs-GaAs-AlGaAs lasers and laser arrays with record low threshold currents of 0.6 mA for cleaved devices and 0.145 mA for high-reflectivity facet-coated devices are fabricated by single-step growth on nonplanar substrates by metalorganic chemical vapor deposition. These laser arrays have high quantum efficiency, low internal loss, and high uniformity because of the one-step growth and simplified processing procedures.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 0.145 mA; 0.6 mA; InGaAs-GaAs-AlGaAs; MOCVD; cleaved devices; high quantum efficiency; high uniformity; high-reflectivity facet-coated devices; low internal loss; low threshold currents; metalorganic chemical vapor deposition; nonplanar substrates; one-step growth; simplified processing procedures; single-step growth; strained-quantum-well InGaAs-GaAs-AlGaAs lasers; sub-milliampere single-quantum-well InGaAs-GaAs-AlGaAs addressable laser arrays; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Optical arrays; Plasma temperature; Pulsed laser deposition; Semiconductor laser arrays; Substrates; Threshold current; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
