Title :
High-power 0.98-μm strained quantum-well lasers fabricated using in situ monitored reactive ion beam etching
Author :
Hamamoto, K. ; Chida, H. ; Miyazaki, T. ; Ishikawa, S.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
6/1/1995 12:00:00 AM
Abstract :
0.98-μm wavelength InGaAs-AlGaAs strained quantum-well buried ridge lasers were fabricated using in situ monitored reactive ion beam etching (RIBE). This technique allowed a very accurate ridge geometry, resulting in high single transverse-mode power more than 250 mW and high-fiber coupled power more than 150 mW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; laser transitions; quantum well lasers; sputter etching; 0.98 micron; 150 mW; 250 mW; InGaAs-AlGaAs; InGaAs-AlGaAs strained quantum-well buried ridge lasers; RIBE; high single transverse-mode power; high-fiber coupled power; high-power; in situ monitored reactive ion beam etching; strained quantum-well lasers; very accurate ridge geometry; Epitaxial growth; Etching; Fiber lasers; Laser modes; Monitoring; Optical device fabrication; Power lasers; Pump lasers; Quantum well lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
