DocumentCode :
79123
Title :
Curved Silicon Micromirror for Linear Displacement-to-Angle Conversion With Uniform Spot Size
Author :
Sabry, Yasser M. ; Khalil, Diaa ; Saadany, Bassam ; Bourouina, Tarik
Author_Institution :
ESIEE Paris, Univ. Paris-Est, Noisy-Le-Grand, France
Volume :
21
Issue :
4
fYear :
2015
fDate :
July-Aug. 2015
Firstpage :
165
Lastpage :
173
Abstract :
This paper reports a novel class of deeply etched curved micromirrors enabling linear conversion between the reflection angle of incident light beam and displacement of the beam axis with respect to the curved mirror principal axis. Moreover, the mirror provides phase-transformation of the light beam independent of the inclination angle of the incident light on the mirror surface. The micromirrors are fabricated on SOI substrate by deep reactive ion etching technology. The profile of the curved surface is optimized and controlled precisely, thanks to the photolithographic process. High optical throughput micromirrors exhibiting submillimeter focal lengths are fabricated with 200-μm etching depth and with a sidewall angle deviation from perfect verticality, which is smaller than 0.1°. Optical measurements at wavelengths of 675 and 1550 nm show transformation of the optical beam with high optical spot size stability during a beam steering process with less than ±5% dependence on the inclination/reflection angle over a scanning angle range of 120°. The presented micromirror has applications in MEMS scanners, displacement/rotation sensing, and optical imaging.
Keywords :
beam steering; elemental semiconductors; micromirrors; photolithography; reflectivity; silicon; silicon-on-insulator; sputter etching; MEMS scanners; SOI substrate; Si; beam axis displacement; beam steering process; curved silicon micromirror; deep reactive ion etching technology; depth 200 mum; displacement/rotation sensing; incident light beam; inclination angle; linear displacement-to-angle conversion; optical imaging; optical measurements; photolithographic process; reflection angle; sidewall angle deviation; submillimeter focal lengths; uniform spot size; wavelength 675 nm to 1550 nm; Micromirrors; Optical attenuators; Optical beams; Optical device fabrication; Optical reflection; Optical sensors; Curved micro-optics; DRIE; MEMS optical bench technology; displacement sensor; optical scanner;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2014.2375493
Filename :
6977888
Link To Document :
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