Uniform arrays of resonant cavity enhanced InGaAs-AlGaAs heterojunction phototransistors

Presents uniformity data on arrays of resonant cavity enhanced InGaAs-AlGaAs phototransistors responding to wavelengths for which the GaAs substrate is transparent. The arrays consist of 7/spl times/7 transistors. The uniformity in resonant wavelength and maximum responsivity was found to be good within individual arrays. The standard deviation of the resonant wavelength was significantly smaller than the resonance full width at half maximum of 8 nm. However, large variations were observed between arrays, This shows the need for a resonant transistor design that can be post-growth tuned to the desired resonance wavelength without affecting the maximum responsivity.<>