High-speed monolithic receiver OEIC consisting of a waveguide p-i-n photodiode and HEMT´s

Author

Muramoto, Y. ; Kato, K. ; Akahori, Y. ; Ikeda, M. ; Kozen, A. ; Itaya, Y.

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

7

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

685

Lastpage

687

Abstract

A novel side-illuminated receiver OEIC, consisting of a waveguide p-i-n photodiode and an InAlAs-InGaAs-HEMT transimpedance amplifier, was fabricated by a dry-etching based process. The OEIC has a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 /spl Omega/, which enables it to receive a 10-Gb/s NRZ signal. These results represent a major advance in achieving ultrahigh-speed side-illuminated OEICs for long-wavelength optical interconnection and transmission systems.<>

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; amplifiers; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; very high speed integrated circuits; 10 Gbit/s; 100 ohm; 8.3 GHz; InAlAs-InGaAs-HEMT transimpedance amplifier; bandwidth; dry-etching based process; fabrication; high-speed monolithic receiver OEIC; long-wavelength optical interconnection; side-illuminated receiver OEIC; transmission systems; waveguide p-i-n photodiode; Bandwidth; Circuits; HEMTs; Indium phosphide; Optical buffering; Optical interconnections; Optical receivers; Optical waveguides; Optoelectronic devices; PIN photodiodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.388765

Filename

388765