Title :
Numerical analysis of the absorption and the refractive index change in arbitrary semiconductor quantum-well structures
Author :
Nakamura, Kenji ; Shimizu, Akira ; Fujii, Kazuhito ; Koshiba, Masanori ; Hayata, Kazuya
Author_Institution :
Canon Inc., Kanagawa, Japan
fDate :
7/1/1992 12:00:00 AM
Abstract :
A numerical method for the analysis of the absorption spectrum and the refractive index change due to an external electric field in quantum-well structures is presented. The finite-element method and the variational method are used to obtain the subband and the exciton energies in a quantum-well structure, respectively. The absorption spectrum due to the band-to-band and the excitonic transitions is then calculated, and the refractive index change is obtained using the Kramers-Kronig relations. This method is applicable to quantum-well structures with arbitrary potential profiles made of arbitrary semiconductors, because it is based on the finite-element method in which the general boundary condition for the heterointerface is employed. The validity of the method is confirmed by comparing the computed results with the measured ones
Keywords :
Kramers-Kronig relations; finite element analysis; light absorption; refractive index; semiconductor quantum wells; variational techniques; Kramers-Kronig relations; absorption spectrum; arbitrary potential profiles; arbitrary semiconductors; exciton energies; excitonic transitions; external electric field; finite-element method; general boundary condition; heterointerface; numerical analysis; numerical method; refractive index change; semiconductor quantum-well structures; variational method; Absorption; Boundary conditions; Finite element methods; Numerical analysis; Optical refraction; Optical saturation; Optical sensors; Optical variables control; Quantum wells; Refractive index;
Journal_Title :
Quantum Electronics, IEEE Journal of
