DocumentCode :
791664
Title :
Fundamental Experiments for the Bloch Line Memory
Author :
Hidaka, Y.
Author_Institution :
Microelectronics Research Labs, NEC Corporation.
Volume :
3
Issue :
10
fYear :
1988
Firstpage :
698
Lastpage :
705
Abstract :
Fundamental functions such as domain stabilization, vertical Bloch line (VBL) pair propagation, and VBL pair injection for the Bloch line memory were experimentally investigated. A ring-shaped domain has been developed which gives a propagation track for VBL pairs. Selective grooving of the magnetic film surface provides for formation and stabilization of the ring-domain. A VBL pair has been propagated by a local in-plane field. VBL pair separation and recombination by an in-plane field was also successfully carried out. A method for VBL pair injection into the domain wall has been developed. This method utilizes the horizontal Bloch line (HBL) punch-through at the flank wall and successive domain chopping. The method is more practical than pushing the stripe domain head.
Keywords :
Conductors; Epitaxial growth; Magnetic confinement; Magnetic domain walls; Magnetic films; Magnetic heads; Magnetic materials; Shape; Substrates; Writing;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1988.4563840
Filename :
4563840
Link To Document :
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