• DocumentCode
    792160
  • Title

    3D simulation of deep-submicron devices. How impurity atoms affect conductance

  • Author

    Jing-Rong Zhou ; Ferry, David K.

  • Author_Institution
    Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
  • Volume
    2
  • Issue
    2
  • fYear
    1995
  • Firstpage
    30
  • Lastpage
    37
  • Abstract
    As electronic devices are scaled down to the 0.1-micron range and below, the location of individual impurity atoms begins to affect whether the gates that control current flow open and close properly. This 3D simulation hints at how the basic structure of matter might limit device size
  • Keywords
    circuit analysis computing; digital simulation; electrical conductivity; impurity scattering; logic gates; semiconductor devices; 0.1 micron; 3D simulation; conductance; current flow control; deep-submicron devices; device size limitations; electronic devices; impurity atoms location; logic gates; Circuit simulation; Contracts; Costs; Integrated circuit technology; Manufacturing processes; Semiconductor devices; Semiconductor impurities; Silicon; Very large scale integration; Voltage control;
  • fLanguage
    English
  • Journal_Title
    Computational Science & Engineering, IEEE
  • Publisher
    ieee
  • ISSN
    1070-9924
  • Type

    jour

  • DOI
    10.1109/99.388952
  • Filename
    388952
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=792160