Title :
3D simulation of deep-submicron devices. How impurity atoms affect conductance
Author :
Jing-Rong Zhou ; Ferry, David K.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
As electronic devices are scaled down to the 0.1-micron range and below, the location of individual impurity atoms begins to affect whether the gates that control current flow open and close properly. This 3D simulation hints at how the basic structure of matter might limit device size
Keywords :
circuit analysis computing; digital simulation; electrical conductivity; impurity scattering; logic gates; semiconductor devices; 0.1 micron; 3D simulation; conductance; current flow control; deep-submicron devices; device size limitations; electronic devices; impurity atoms location; logic gates; Circuit simulation; Contracts; Costs; Integrated circuit technology; Manufacturing processes; Semiconductor devices; Semiconductor impurities; Silicon; Very large scale integration; Voltage control;
Journal_Title :
Computational Science & Engineering, IEEE
