GaN/AlGaN p-channel inverted heterostructure JFET

Author

Shatalov, Maxim ; Simin, Grigory ; Zhang, Jianping ; Adivarahan, Vinod ; Koudymov, Alexei ; Pachipulusu, Radhika ; Khan, M. Asif

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

Volume

23

Issue

8

fYear

2002

Firstpage

452

Lastpage

454

Abstract

A novel GaN/AlGaN p-channel inverted heterostructure junction field-effect transistor (HJFET) with a n/sup +/-type gate is proposed and demonstrated. A new superlattice aided strain compensation techniques was used for fabricating high quality GaN/AlGaN p-n junction. The p-channel HJFET gate leakage current was below 10 nA, and the threshold voltage was 8 V, which is close to that of typical n-channel HFETs. This new HJFET device opens up a way for fabricating nitride based complimentary integrated circuits.

Keywords

III-V semiconductors; accumulation layers; aluminium compounds; carrier density; contact resistance; gallium compounds; junction gate field effect transistors; leakage currents; wide band gap semiconductors; GaN-AlGaN; TLM measurements; contact resistance modulation; gate leakage current; high quality p-n junction; hole accumulation layer; hole density distribution; metalorganic chemical vapor deposition; n/sup +/-type gate; nitride based complimentary IC; p-channel inverted heterostructure JFET; p-ohmic contacts; sheet carrier density; simulated band diagram; strain energy band engineering; superlattice aided strain compensation; threshold voltage; Aluminum gallium nitride; Capacitive sensors; FETs; Gallium nitride; HEMTs; Leakage current; MODFETs; P-n junctions; Superlattices; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.801295

Filename

1021090