Title :
High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz
Author :
Vellas, N. ; Gaquiere, C. ; Guhel, Y. ; Werquin, M. ; Bue, F. ; Aubry, R. ; Delage, S. ; Semond, F. ; De Jaeger, J.C.
Author_Institution :
TIGER Common Lab., Inst. d´´Electronique et de Microelectronique du Nord, Villeneuve d´´Ascq, France
Abstract :
In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high bandgap GaN devices are ideal candidates for the applications requiring high power and linearity simultaneously.
Keywords :
III-V semiconductors; gallium compounds; intermodulation distortion; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device metallisation; wide band gap semiconductors; 4 GHz; DC characterization; GaN; HEMT devices; Schottky contact metallization; Si; high bandgap; high drain-source bias; high linearity performances; high resistive silicon [111] substrate; intermodulation ratio; large signal characterization; load impedance; microwave power devices; ohmic contact metallization; reactive molecular beam epitaxy; small signal characterization; two-tone results; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; Linearity; Microwave devices; Silicon carbide; Thermal conductivity; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2002.801328
