High linearity performances of GaN HEMT devices on silicon substrate at 4 GHz

Author

Vellas, N. ; Gaquiere, C. ; Guhel, Y. ; Werquin, M. ; Bue, F. ; Aubry, R. ; Delage, S. ; Semond, F. ; De Jaeger, J.C.

Author_Institution

TIGER Common Lab., Inst. d´´Electronique et de Microelectronique du Nord, Villeneuve d´´Ascq, France

Volume

23

Issue

8

fYear

2002

Firstpage

461

Lastpage

463

Abstract

In this letter, we demonstrate that, for high linearity application, GaN devices benefit from their high drain-source bias voltages. An improvement up to 20 dB in intermodulation ratio can be observed at high power levels compared to usual GaAs PHEMT devices. This study demonstrates that the high bandgap GaN devices are ideal candidates for the applications requiring high power and linearity simultaneously.

Keywords

III-V semiconductors; gallium compounds; intermodulation distortion; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device metallisation; wide band gap semiconductors; 4 GHz; DC characterization; GaN; HEMT devices; Schottky contact metallization; Si; high bandgap; high drain-source bias; high linearity performances; high resistive silicon [111] substrate; intermodulation ratio; large signal characterization; load impedance; microwave power devices; ohmic contact metallization; reactive molecular beam epitaxy; small signal characterization; two-tone results; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; HEMTs; III-V semiconductor materials; Linearity; Microwave devices; Silicon carbide; Thermal conductivity; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2002.801328

Filename

1021093