Title :
Determination of InP HEMT noise parameters and S-parameters to 60 GHz
Author :
Webster, Richard T. ; Slobodnik, Andrew J. ; Roberts, George A.
Author_Institution :
Rome Lab, Electromagnetics & Reliability Directorate, Hanscom AFB, MA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
A millimeterwave experimental technique is described for directly determining the noise parameters and scattering parameters of V-band InP HEMT´s. The parameters are suitable for the design of monolithic millimeterwave integrated circuits since they represent the InP HEMT as it would appear in the monolithic environment. The method relies on careful characterization of the measurement system and the InP HEMT packages or test fixtures. Results are provided for an InP HEMT with 1.37 dB minimum noise figure and a maximum stable gain of 12.74 dB at 57 GHz. In addition, it is shown that noise parameters measured between 2 GHz and 26 GHz can be extrapolated to 60 GHz, and that consistent S-parameters can be obtained for InP HEMT´s in precision packages and test fixtures
Keywords :
III-V semiconductors; S-parameters; electric noise measurement; equivalent circuits; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; millimetre wave measurement; semiconductor device models; semiconductor device noise; semiconductor device testing; 1.37 dB; 12.74 dB; 2 to 60 GHz; EHF; HEMT noise parameters; HEMT packages; InP; MM-wave devices; S-parameters; V-band; millimeter-wave experimental technique; monolithic environment; scattering parameters; test fixtures; Circuit testing; Fixtures; HEMTs; Indium phosphide; Integrated circuit measurements; Integrated circuit noise; Integrated circuit packaging; Monolithic integrated circuits; Scattering parameters; Working environment noise;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
