Title :
HEMT for low-noise microwaves: CAD-oriented performance evaluation
Author :
Capponi, Giuseppe ; Di Maio, Bruno ; Livreri, Patrizia
Author_Institution :
Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy
fDate :
6/1/1995 12:00:00 AM
Abstract :
This paper shows how a graphic processing of low-noise HEMT´s small signal parameters, allows evaluating and comparing the actual performance obtainable in front-end applications. HEMT´s tradeoff charts which solve tradeoffs among the basic low-noise amplifier performance are reported. Figures of merit for microwave low-noise HEMT which represent a fast way of evaluating HEMT in actual working conditions and of selecting the proper transistor, are defined. As an example, the tradeoff charts and the figures of merit of two HEMT´s (Fujitsu FHR02FH, Sony 2SK677) and a pseudomorphic-HEMT (Celeritek CFB001-03) are reported and compared with the data sheets
Keywords :
S-parameters; circuit CAD; electronic engineering computing; engineering graphics; high electron mobility transistors; microwave field effect transistors; semiconductor device noise; CAD-oriented performance evaluation; Celeritek CFB001-03; Fujitsu FHR02FH; Sony 2SK677; front-end applications; graphic processing; low-noise microwave operation; pseudomorphic device; small signal parameters; Acoustic reflection; Employee welfare; Frequency; HEMTs; Impedance; Low-noise amplifiers; Microwave transistors; Noise figure; Scattering parameters; Transformers;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
