Title :
A comparison of planar doped barrier diode performance versus Schottky diode performance in a single balanced, MIC mixer with low LO drive
Author :
Poelker, John N. ; Robertson, Ralston S.
Author_Institution :
Hughes Missile Syst. Co., Canoga Park, CA, USA
fDate :
6/1/1995 12:00:00 AM
Abstract :
This paper demonstrates that an unbiased GaAs planar doped barrier (PDB) diode, single balanced, Ku-band mixer achieves conversion loss performance comparable to a bias-optimized GaAs Schottky design at low local oscillator (LO) power levels for identical RF circuits. An experimental, side-by-side, performance comparison as a function of LO power is presented along with a harmonic balance (HB) simulation. The PDB diode is of interest for its zero-bias requirement and the high pulsed peak power handling potential for low-cost radars
Keywords :
Schottky diode mixers; microwave diodes; microwave integrated circuits; microwave mixers; nonlinear network analysis; GaAs; Ku-band mixer; LO power; SHF; Schottky diode; conversion loss performance; harmonic balance simulation; high pulsed peak power handling; low LO drive; low-cost radar; performance comparison; planar doped barrier diode; single balanced MIC mixer; zero-bias requirement; Circuits; Gallium arsenide; Packaging; Performance loss; Power generation; Radar; Radio frequency; Schottky diodes; Semiconductor diodes; Testing;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
