Correction technique for on-chip modulation response measurements of optoelectronic devices

Author

Debie, Peter ; Martens, Luc

Author_Institution

Dept. of Inf. Technol., Gent Univ., Belgium

Volume

43

Issue

6

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

1264

Lastpage

1269

Abstract

A new and accurate error correction technique for on-chip intensity modulation response measurements of high-frequency optoelectronic devices is presented. Mathematical expressions for the different sources of errors that exist in the measurement system are derived. The new correction technique applied to the modulation response measurement of a strained quantum well laser diode shows excellent agreement with the theoretically expected result. Simulation results for a small-signal circuit model of the laser diode show excellent agreement with the measured input reflection coefficient S₁₁ and the modulation response S₂₁. With the corrected modulation response measurement, more accurate parameters for this model are extracted

Keywords

equivalent circuits; error correction; integrated optoelectronics; measurement errors; optical modulation; optoelectronic devices; quantum well lasers; semiconductor device models; semiconductor device testing; semiconductor lasers; HF optoelectronic devices; error correction technique; high-frequency optoelectronic devices; intensity modulation; measurement system errors; onchip modulation response measurements; small-signal circuit model; strained quantum well laser diode; Circuits; Diode lasers; High speed optical techniques; Microwave devices; Optical attenuators; Optical devices; Optical modulation; Optical reflection; Optoelectronic devices; Photodiodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.390181

Filename

390181