$1/f$ Noise Expressions for Amorphous InGaZnO TFTs Considering Mobility Power-Law Parameter in Above-Threshold Regime

Author

Hongyu He ; Xueren Zheng ; Shengdong Zhang

Author_Institution

Shenzhen Grad. Sch., Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China

Volume

36

Issue

2

fYear

2015

fDate

Feb. 2015

Firstpage

156

Lastpage

158

Abstract

Analytical 1/f noise expressions are presented for amorphous InGaZnO thin-film transistors considering the well-known power-law parameter α in the mobility equation. The drain current noise power spectral density (PSD) is derived from Ghibaudo´s carrier number fluctuation model. It is found that the parameter α clarifies the relationship between the drain current noise PSD and the drain current. The relationship is verified by the available experimental data.

Keywords

1/f noise; gallium compounds; indium compounds; semiconductor device models; semiconductor device noise; thin film transistors; wide band gap semiconductors; zinc compounds; Ghibaudo carrier number fluctuation model; InGaZnO; above-threshold regime; amorphous TFT; amorphous thin-film transistors; analytical 1/f noise expressions; drain current noise PSD; drain current noise power spectral density; mobility equation; mobility power-law parameter; Low-frequency noise; Mathematical model; Semiconductor device modeling; Silicon; Thin film transistors; InGaZnO (IGZO); Thin-film transistor (TFT); carrier mobility; low frequency noise;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2378251

Filename

6977901