Title :
Organic thin-film transistors using pentacene and SiOC film
Author_Institution :
Sch. of Electron. & Inf. Eng., Cheongju Univ., South Korea
Abstract :
Pentacene for organic thin-film transistors (OTFTs) was deposited on the SiOC film by thermal evaporation. The transfer characteristic of the pentacene channel as the active layer is dependent on the chemical properties of a surface-on-gate insulator. Hybrid-type SiOC film can have all chemical properties from organic to inorganic properties according to the deposition condition. Pentacene on SiOC film shows the gradient or normal growth because of the C=C bond in SiOC film. Normal growth of pentacene molecules increased the grain size of the surface of pentacene on SiOC film, and the mobility of OTFTs on SiOC films prepared with an O2/(BTMSM+O2) flow rate ratio of 80% is 2.19 (cm2/Vs).
Keywords :
bonds (chemical); grain size; organic semiconductors; silicon compounds; thin film transistors; vacuum deposition; C=C bond; SiOC; SiOC film deposition; SiOC film growth; active layer; flow rate; grain size; organic thin-film transistors; pentacene; surface-on-gate insulator; thermal evaporation; Bonding; Chemicals; Dielectric materials; Dielectrics and electrical insulation; Grain boundaries; Grain size; Organic thin film transistors; Pentacene; Semiconductor films; Thin film transistors; Cross link; Diels–Alder reaction; SiOC film; cross-link breakage; organic thin-film transistor (OTFT); pentacene;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2005.858591
