• DocumentCode
    793028
  • Title

    Geiger mode operation of an In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode

  • Author

    Karve, Gauri ; Zheng, Xiaoguang ; Zhang, Xiaofeng ; Li, Xiaowei ; Li, Ning ; Wang, Shuling ; Ma, Feng ; Holmes, Archie, Jr. ; Campbell, Joe C. ; Kinsey, G.S. ; Boisvert, J.C. ; Isshiki, T.D. ; Sudharsanan, R. ; Bethune, Donald S. ; Risk, William P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX, USA
  • Volume
    39
  • Issue
    10
  • fYear
    2003
  • Firstpage
    1281
  • Lastpage
    1286
  • Abstract
    Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.
  • Keywords
    aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; photon counting; 130 K; 16 percent; Geiger mode operation; In0.53Ga0.47As-In0.52Al0.48As; In0.53Ga0.47As-In0.52Al0.48As avalanche photodiode; dark counts; gated mode quenching; low-temperature photon counting; multiplication avalanche photodiodes; separate absorption charge and multiplication avalanche photodiodes; single-photon detection efficiency; Absorption; Avalanche photodiodes; Breakdown voltage; Charge carrier processes; Cryptography; Detectors; Impact ionization; Indium phosphide; Photodetectors; Photonic band gap;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2003.817244
  • Filename
    1233732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=793028