Quasistatic Bubble Propagation in 1.5 μm Period Ion-Implanted Tracks for 64 Mbit Magnetic Bubble Memory Devices

Ion-implanted tracks with a 1.5 μm period for use in 64 Mbit magnetic bubble memory devices have been fabricated and operated. The bubble material used was (BiSmLu)3 (FeAl)5O12 garnet film, supporting 0.45 μm bubbles. The resist mask patterns for implantation were formed using a 1/10 reduction projection aligner, using rectangular patterns on a reticle. The bubble propagation tracks were fabricated by double deuterium implantation and annealed at 400°C for 30 minutes, with an SiO2 layer deposited on the garnet surface to stabilize the implanted layer. An operating bias field margin in excess of 7% was stably obtained in quasistatic bubble propagation. This shows that the ion-implanted devices have great potential for use in 64 Mbit magnetic bubble memory devices.