Title :
Temperature stable Hall effect sensors
Author :
Partin, Dale L. ; Heremans, Joseph P. ; Schroeder, Thaddeus ; Thrush, Christopher M. ; Flores-Mena, Luis A.
Author_Institution :
Delphi Res. Labs., Shelby Township, MI, USA
Abstract :
Magnetic field sensors are needed for high-accuracy position, angle, force, strain, torque, and current flow measurements. Molecular beam epitaxy was used to grow tellurium-doped indium-gallium antimonide thin films. Hall effect sensors made from these films have been studied for their magnetic sensitivity and thermal stability. For a range of alloy composition near In0.8Ga0.2Sb and n-type doping levels near 2×1017 cm-3, high magnetic sensitivity from -40°C to +200°C was found with a resolution of better than ±0.5% over the entire temperature range.
Keywords :
Hall effect transducers; III-V semiconductors; carrier mobility; indium compounds; magnetic sensors; molecular beam epitaxial growth; semiconductor thin films; tellurium; thermal stability; vapour deposited coatings; -40 to 200 C; Hall effect sensors; In0.8Ga0.2Sb; InGaSb:Te; electron mobility; magnetic field sensors; magnetic sensitivity; molecular beam epitaxy; n-type doping levels; tellurium-doped indium-gallium antimonide thin films; temperature stability; thermal stability; Capacitive sensors; Current measurement; Force measurement; Force sensors; Hall effect devices; Magnetic field induced strain; Magnetic field measurement; Magnetic sensors; Strain measurement; Temperature sensors; Electron mobility; Hall effect sensor; indium–gallium antimonide; molecular beam epitaxy (MBE); thermal stability;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2005.860362
