Color mixing improvement of CMOS image sensor with air-gap-guard ring in deep-submicrometer CMOS technology

Author

Hsu, T.H. ; Fang, Y.K. ; Yaung, D.N. ; Wuu, S.G. ; Chien, H.C. ; Wang, C.S. ; Lin, J.S. ; Tseng, C.H. ; Chen, S.F. ; Lin, C.S. ; Lin, C.Y.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Hsinchu, Taiwan

Volume

26

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

301

Lastpage

303

Abstract

Color mixings of a CMOS image sensor with air-gap-guard-ring (AGGR) and conventional structures were investigated in 0.18-μm CMOS image sensor technology. As the light incident angle is increased from 0/spl deg/ to 15/spl deg/, conventional pixel shows serious color mixing. For example, the maximum photo responses of blue, green1, green2, and red pixels are shifted from 490 to 520 nm, 530 to 500 nm, 530 to 600 nm, and 600 to 580 nm, respectively. However, pixels with AGGR not only keep correct spectral response without peak shift but also achieve 5%-50% crosstalk reduction, thus preventing the sensor from color mixing efficiently.

Keywords

CMOS image sensors; air gaps; crosstalk; 0.18 micron; CMOS image sensor; CMOS technology; air gap guard ring; color mixing; crosstalk; light incident angle; photo responses; spectral response; CMOS image sensors; CMOS logic circuits; CMOS technology; Color; Colored noise; Computational Intelligence Society; Image sensors; Optical crosstalk; Optical scattering; Pixel; Air gap guard ring; crosstalk; image sensor; spectral response;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.846574

Filename

1425689