Title :
AlGaAs/GaAs heterojunction bipolar transistor decision circuit
Author :
Swartz, R.G. ; Lunardi, L.M. ; Malik, R.J. ; Feuer, Mark D. ; Walker, Joel F. ; Fullowan, T.R.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
An AlGaAs/GaAs heterojunction bipolar transistor (HBT) decision circuit has been designed and characterised for optical communications, using 3.5 mu m emitter width transistors with cutoff frequency of 27 GHz. The maximum bitrate for a BER of 10-9 was 4.2 Gbit/s. At 2.0 Gbit/s, the clock phase margin was 240 degrees .
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; emitter-coupled logic; gallium arsenide; heterojunction bipolar transistors; integrated logic circuits; optical communication equipment; 2 to 4.2 Gbit/s; 27 GHz; 3.5 micron; AlGaAs-GaAs; BER; ECL latches; HBT; III-V semiconductors; clock phase margin; cutoff frequency; decision circuit; heterojunction bipolar transistor; logic IC; maximum bitrate; optical communications;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890087
