Density and phase dependence of edge erase band in MR/thin film head recording

Author

Luo, Yansheng ; Lam, Terence T. ; Zhu, Jian-Gang

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

Volume

31

Issue

6

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

3105

Lastpage

3107

Abstract

The erase band resulting from edge overwrite has been studied using magnetic force microscopy. Utilizing image processing techniques, we developed a method to accurately measure the width of the edge erase band. In this paper, we focus on the study of MR/thin film head recording. Our experimental results show the erase band width is strongly dependent on the relative phase of the transitions in the old and new tracks at low bit densities. As the recording density is increased, the erase band width increases and becomes independent of the phase change. The erase band width observed ranges from 0 to 0.7 μm for a typical MR/thin film head with 4 μm wide trailing pole

Keywords

digital magnetic recording; magnetic force microscopy; magnetic heads; magnetoresistive devices; MR/thin film head recording; density dependence; edge erase band; edge overwrite; image processing techniques; magnetic force microscopy; phase dependence; Disk recording; Frequency; Image processing; Magnetic films; Magnetic force microscopy; Magnetic forces; Magnetic heads; Magnetic recording; Magnetic separation; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.490284

Filename

490284