AlGaN/GaN HEMTs-an overview of device operation and applications

Author

Mishra, Umesh K. ; Parikh, Primit ; Wu, Yi-Feng

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

90

Issue

6

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1022

Lastpage

1031

Abstract

Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MMIC; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power integrated circuits; reviews; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; GaN-based power amplifier; MMICs; circuit technology; communications; microwave transmitters; overview; power conditioning; power electronics; radar; wide bandgap semiconductors; Aluminum gallium nitride; Gallium nitride; Microwave communication; Microwave devices; Power conditioning; Power electronics; Radar applications; Semiconductor materials; Transmitters; Wide band gap semiconductors;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/JPROC.2002.1021567

Filename

1021567