Title :
AlGaN/GaN HEMTs-an overview of device operation and applications
Author :
Mishra, Umesh K. ; Parikh, Primit ; Wu, Yi-Feng
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar. Of the various materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems.
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; field effect MMIC; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; power integrated circuits; reviews; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMTs; GaN-based power amplifier; MMICs; circuit technology; communications; microwave transmitters; overview; power conditioning; power electronics; radar; wide bandgap semiconductors; Aluminum gallium nitride; Gallium nitride; Microwave communication; Microwave devices; Power conditioning; Power electronics; Radar applications; Semiconductor materials; Transmitters; Wide band gap semiconductors;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2002.1021567
