Title :
Impact of wide bandgap microwave devices on DoD systems
Author :
Kemerley, Robert Tim ; Wallace, Bruce H. ; Yoder, Max N.
Author_Institution :
Aerosp. Components Div., Air Force Res. Lab., Wright-Patterson AFB, OH, USA
fDate :
6/1/2002 12:00:00 AM
Abstract :
Radiofrequency (RF) semiconductor electronics enable military systems that operate in the microwave and millimeter wave frequency bands of 1-100 GHz. The performance of numerous electromagnetic systems could be enhanced by the inclusion of wide bandgap (WBG) microwave and millimeter wave devices, either as power amplifier or receiver elements. The demonstrated power performance has generally been six to ten times that of equivalent gallium arsenide or indium phosphide devices up through 20 GHz, with enhanced dynamic range and improved impedance matching. These characteristics provide an opportunity to significantly reduce the number of modules required for many active aperture antenna systems, hence, cost, while enabling new capabilities for shared apertures. Prior to realization of any WBG system deployment, however considerable development and maturation of WBG materials, devices, and circuits must yet ensue.
Keywords :
active antennas; impedance matching; microwave power amplifiers; military equipment; millimetre wave power amplifiers; wide band gap semiconductors; 1 to 100 GHz; DoD systems; WBG; active aperture antenna systems; dynamic range; impedance matching; military systems; millimeter wave frequency bands; power amplifier elements; receiver elements; wide bandgap microwave devices; Apertures; Electromagnetic devices; Electromagnetic scattering; Microwave amplifiers; Microwave devices; Millimeter wave devices; Photonic band gap; Power amplifiers; Radio frequency; Radiofrequency amplifiers;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2002.1021570