Title :
Effects of 600 MeV Protons on M.O.S. Transistors
Author :
Rouanet, J.C. ; Giraud, J.L. ; de Lafond, Y.Gervais
Author_Institution :
Centre d´´Etude Spatiale des Rayonnements Toulouse - France
Abstract :
This paper deals with a brief report of the irradiation of M.O.S.T. at C.E.R.N., using 600 MeV protons. The behavior of two fundamental parameters : the treshold voltage and the mobility of the holes in the channel were studied using p-channel transistors.
Keywords :
Channel capacity; Degradation; Electrons; Equations; Photomultipliers; Protons; Silicon; Stochastic processes; Synchrocyclotrons; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1969.4325482
