Title :
Interstitial Defects in p-Type Silicon
Author :
Cherki, M. ; Kalma, A.H.
Author_Institution :
Groupe de Physique des Solides de l´´Ecole Normalle Supérieure Tour 23 - 9, quai Saint-Bernard Paris 5e, France
Abstract :
Two defects introduced in boron- and aluminum-doped silicon by 1.5-MeV electron irradiation have been studied by means of infrared photoconductivity. The defects have been identified as being dopant atoms in interstital positions. Stress-induced dichroism measurements have allowed the determination of the defects´ symmetry which is C3v.
Keywords :
Atomic measurements; Electrons; Optical polarization; Paramagnetic resonance; Photoconductivity; Production; Shape measurement; Silicon; Stress measurement; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1969.4325500
