• DocumentCode
    793990
  • Title

    Interstitial Defects in p-Type Silicon

  • Author

    Cherki, M. ; Kalma, A.H.

  • Author_Institution
    Groupe de Physique des Solides de l´´Ecole Normalle Supérieure Tour 23 - 9, quai Saint-Bernard Paris 5e, France
  • Volume
    16
  • Issue
    6
  • fYear
    1969
  • Firstpage
    24
  • Lastpage
    27
  • Abstract
    Two defects introduced in boron- and aluminum-doped silicon by 1.5-MeV electron irradiation have been studied by means of infrared photoconductivity. The defects have been identified as being dopant atoms in interstital positions. Stress-induced dichroism measurements have allowed the determination of the defects´ symmetry which is C3v.
  • Keywords
    Atomic measurements; Electrons; Optical polarization; Paramagnetic resonance; Photoconductivity; Production; Shape measurement; Silicon; Stress measurement; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1969.4325500
  • Filename
    4325500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=793990