DocumentCode :
794005
Title :
Design and optimization of multithreshold CMOS (MTCMOS) circuits
Author :
Anis, Mohab ; Areibi, Shawki ; Elmasry, Mohamed
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Ontario, Ont., Canada
Volume :
22
Issue :
10
fYear :
2003
Firstpage :
1324
Lastpage :
1342
Abstract :
Reducing power dissipation is one of the most important issues in very large scale integration design today. Scaling causes subthreshold leakage currents to become a large component of total power dissipation. Multithreshold technology has emerged as a promising technique to reduce leakage power. This paper presents several heuristic techniques for efficient gate clustering in multithreshold CMOS circuits by modeling the problem via bin-packing (BP) and set-partitioning (SP) techniques. The SP technique takes the circuit´s routing complexity into consideration which is critical for deep submicron (DSM) implementations. By applying the techniques to six benchmarks to verify functionality, results obtained indicate that our proposed techniques can achieve on average 84% savings for leakage power and 12% savings for dynamic power. Furthermore, four hybrid clustering techniques that combine the BP and SP techniques to produce a more efficient solution are also devised. Ground bounce was also taken as a design parameter in the optimization problem. While accounting for noise, the proposed hybrid solution achieves on average 9% savings for dynamic power and 72% savings for leakage power dissipation at sufficient speeds and adequate noise margins.
Keywords :
CMOS digital integrated circuits; VLSI; circuit layout CAD; circuit optimisation; integrated circuit noise; leakage currents; logic partitioning; benchmarks; bin-packing; design parameter; dynamic power; gate clustering; heuristic techniques; hybrid clustering techniques; leakage power; leakage power dissipation; multithreshold CMOS; noise margins; optimization problem; routing complexity; set-partitioning; subthreshold leakage currents; total power dissipation; very large scale integration design; Capacitance; Charge pumps; Circuits; Design optimization; Dynamic voltage scaling; Leakage current; MOS devices; Power dissipation; Subthreshold current; Threshold voltage;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/TCAD.2003.818127
Filename :
1233819
Link To Document :
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