Title :
Fabrication of microstructured magnetic tunneling valve junction
Author :
Matsuyama, K. ; Asada, H. ; Miyoshi, B. ; Taniguchi, K.
Author_Institution :
Dept. of Electr. Eng., Kyushu Univ., Fukuoka, Japan
fDate :
11/1/1995 12:00:00 AM
Abstract :
A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78Ni-Fe and Co were deposited by conventional rf sputtering. Rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R=4.1 Ω, ΔR=8 mΩ) was observed at room temperature in the microstructured 40×40 μm2 junction
Keywords :
magnetoresistive devices; photolithography; sputter deposition; tunnelling; NiFe-Al2O3-Co; RF sputtering; fabrication; ferromagnet-insulator-ferromagnet system; magnetoresistance; microstructured magnetic tunneling valve junction; oxidation; photolithography; Counting circuits; Electrodes; Fabrication; Magnetic tunneling; Magnetoresistance; Oxidation; Sputtering; Surface resistance; Temperature; Valves;
Journal_Title :
Magnetics, IEEE Transactions on
