• DocumentCode
    794030
  • Title

    Fabrication of microstructured magnetic tunneling valve junction

  • Author

    Matsuyama, K. ; Asada, H. ; Miyoshi, B. ; Taniguchi, K.

  • Author_Institution
    Dept. of Electr. Eng., Kyushu Univ., Fukuoka, Japan
  • Volume
    31
  • Issue
    6
  • fYear
    1995
  • fDate
    11/1/1995 12:00:00 AM
  • Firstpage
    3176
  • Lastpage
    3178
  • Abstract
    A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78Ni-Fe and Co were deposited by conventional rf sputtering. Rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R=4.1 Ω, ΔR=8 mΩ) was observed at room temperature in the microstructured 40×40 μm2 junction
  • Keywords
    magnetoresistive devices; photolithography; sputter deposition; tunnelling; NiFe-Al2O3-Co; RF sputtering; fabrication; ferromagnet-insulator-ferromagnet system; magnetoresistance; microstructured magnetic tunneling valve junction; oxidation; photolithography; Counting circuits; Electrodes; Fabrication; Magnetic tunneling; Magnetoresistance; Oxidation; Sputtering; Surface resistance; Temperature; Valves;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.490319
  • Filename
    490319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794030