Title :
A DC technique for determining GaAs MESFET thermal resistance
Author :
Estreich, Donald B.
Author_Institution :
Hewlett-Packard Co., Santa Rosa, CA, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A novel DC electrical method (DCEM) for measuring the thermal resistance of GaAs MESFETs using the temperature dependence of the gate metal resistivity is described. The method requires a DC current to be passed (end-to-end) through the gate stripe to monitor the average temperature of the channel. The DCEM can measure the average thermal resistance over the entire operating range of a Schottky-gate MESFET using only DC measuring instruments. An example is given showing the thermal resistance of an ion-implanted 0.5-μm GaAs MESFET as a function of DC power dissipation
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device testing; thermal resistance measurement; 0.5 micron; DC electrical method; DC measuring instruments; DC power dissipation; GaAs MESFET; GaAs MESFET thermal resistance; GaAs ion implanted transistor; Schottky-gate MESFET; average channel temperature; average thermal resistance; gate metal resistivity temperature dependence; gate stripe; Conductivity; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; MESFETs; Temperature dependence; Temperature measurement; Temperature sensors; Thermal resistance;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
