A DC technique for determining GaAs MESFET thermal resistance

Author

Estreich, Donald B.

Author_Institution

Hewlett-Packard Co., Santa Rosa, CA, USA

Volume

12

Issue

4

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

675

Lastpage

679

Abstract

A novel DC electrical method (DCEM) for measuring the thermal resistance of GaAs MESFETs using the temperature dependence of the gate metal resistivity is described. The method requires a DC current to be passed (end-to-end) through the gate stripe to monitor the average temperature of the channel. The DCEM can measure the average thermal resistance over the entire operating range of a Schottky-gate MESFET using only DC measuring instruments. An example is given showing the thermal resistance of an ion-implanted 0.5-μm GaAs MESFET as a function of DC power dissipation

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device testing; thermal resistance measurement; 0.5 micron; DC electrical method; DC measuring instruments; DC power dissipation; GaAs MESFET; GaAs MESFET thermal resistance; GaAs ion implanted transistor; Schottky-gate MESFET; average channel temperature; average thermal resistance; gate metal resistivity temperature dependence; gate stripe; Conductivity; Electric resistance; Electric variables measurement; Electrical resistance measurement; Gallium arsenide; MESFETs; Temperature dependence; Temperature measurement; Temperature sensors; Thermal resistance;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.49032

Filename

49032