• DocumentCode
    794121
  • Title

    Radiation-Induced Second Breakdown in Transistors

  • Author

    Carr, E.A. ; Binder, D.

  • Author_Institution
    Hughes Aircraft Company Fullerton, California
  • Volume
    16
  • Issue
    6
  • fYear
    1969
  • Firstpage
    120
  • Lastpage
    123
  • Abstract
    Second breakdown was induced in the 2N914 transistor by electron pulses from a 10 MeV Linac. The typical time delay for the initiation of breakdown was observed as well as the reduction in time delay with increasing voltage. In addition, a transistor subject to a non-limited breakdown was observed to fail by a collector-to-emitter short. Threshold voltages for second breakdown were observed to decrease with increasing dose rate ir the BV and BV modes. At 1 or 2 × 1010 rad(Si)/sec the voltage decreased below the rated (BVCEO) voltage of the 2N914 transistor.
  • Keywords
    Breakdown voltage; Cables; Circuits; Delay effects; Electric breakdown; Electrons; Ionizing radiation; Linear particle accelerator; Photoconductivity; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1969.4325514
  • Filename
    4325514
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794121