Radiation-Induced Second Breakdown in Transistors

Second breakdown was induced in the 2N914 transistor by electron pulses from a 10 MeV Linac. The typical time delay for the initiation of breakdown was observed as well as the reduction in time delay with increasing voltage. In addition, a transistor subject to a non-limited breakdown was observed to fail by a collector-to-emitter short. Threshold voltages for second breakdown were observed to decrease with increasing dose rate ir the BV and BV modes. At 1 or 2 × 1010 rad(Si)/sec the voltage decreased below the rated (BVCEO) voltage of the 2N914 transistor.