Simulation of sub-micron GMR memory cells

Author

Beech, R.S. ; Pohm, A.V. ; Daughton, J.M.

Author_Institution

Nonvolatile Electron. Inc., Eden Prairie, MN, USA

Volume

31

Issue

6

fYear

1995

fDate

11/1/1995 12:00:00 AM

Firstpage

3203

Lastpage

3205

Abstract

A program has been developed for simulating submicron GMR memory cells. The simulation program is based on a two dimensional micro-magnetic equation; exchange forces, important at these dimensions, are included in the calculations. Simulation results are used to estimate the resistance change and required switching fields for 0.2 μm by 0.7 μm memory cells. The calculated values, ΔR of 0.028 Ω and word field of 1500 Oe for switching, closely approximate the measured values of 0.015 Ω to 0.03 Ω and about 1700 Oe

Keywords

digital simulation; electronic engineering computing; exchange interactions (electron); giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetic switching; magnetisation; magnetoresistive devices; 0.2 mum; 0.7 mum; CoFe-Cu-NiFeCo; exchange forces; resistance change; simulation program; submicron GMR memory cells; switching fields; top layer magnetization; two dimensional micromagnetic equation; word field; Demagnetization; Equations; Giant magnetoresistance; Magnetic fields; Magnetic materials; Magnetic memory; Magnetic separation; Magnetic switching; Saturation magnetization; Switches;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.490328

Filename

490328