Title :
Spin-valve RAM cell
Author :
Tang, D.D. ; Wang, P.K. ; Speriosu, V.S. ; Le, S. ; Kung, K.K.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fDate :
11/1/1995 12:00:00 AM
Abstract :
This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full ΔR of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell
Keywords :
giant magnetoresistance; magnetic film stores; magnetic multilayers; magnetic switching; magnetoresistive devices; random-access storage; 2 ns; 6 micron; cell stripe; dc voltage difference; ferromagnetic thin film layers; giant magnetoresistance effects; high-speed sensing schemes; nonvolatile memory cell; read/write characteristics; spin-valve RAM cell; state switching; Copper; Magnetic domain walls; Magnetic materials; Magnetization; Nonvolatile memory; Random access memory; Read-write memory; Spin valves; Switches; Wires;
Journal_Title :
Magnetics, IEEE Transactions on
