DocumentCode :
794230
Title :
Plasma-activated chemical vapor deposition of bismuth-substituted iron garnets for magneto-optical data storage
Author :
Anoikin, Eugene V. ; Sides, Paul J.
Author_Institution :
Dept. of Chem. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
31
Issue :
6
fYear :
1995
fDate :
11/1/1995 12:00:00 AM
Firstpage :
3239
Lastpage :
3241
Abstract :
Polycrystalline garnet thin films were obtained on glass substrates by plasma-activated chemical vapor deposition followed by annealing at 670°C. The single mixed precursor approach was used to achieve vaporization and transport of low-vapor-pressure powdered metalorganic precursors to a plasma reactor. Bi, Ga-substituted dysprosium iron garnet film showed a square Faraday hysteresis loop with a rotation of ~2 deg/μm at 633 nm wavelength and low surface roughness of ~2 nm, which are favorable properties for high-density magneto-optical data storage
Keywords :
Faraday effect; bismuth compounds; garnets; magnetic thin films; magneto-optical recording; plasma CVD; 633 nm; 670 C; BiDyGaFe5O12; BiDyGaIG; Faraday hysteresis loop; Faraday rotation; MOCVD; annealing; bismuth-substituted iron garnets; magneto-optical data storage; plasma-activated chemical vapor deposition; polycrystalline thin films; single mixed precursor; surface roughness; Annealing; Chemical vapor deposition; Garnet films; Glass; Inductors; Plasma chemistry; Plasma properties; Plasma transport processes; Plasma waves; Substrates;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.490335
Filename :
490335
Link To Document :
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