Radiation Hardening of Thermal Oxides on Silicon via Ion Implantation

Implantation of thermal oxide on silicon with 1016 N2+ cm-2 at an energy of 50 keV reduces the space charge buildup observed in the oxide when exposed subsequently to ionizing radiation. The component of radiation-induced charge buildup in the oxide attributable to the increase in fast surface states at the oxide-silicon interface is largely unaffected.