High current InP/InGaAs evanescently coupled waveguide phototransistor

Author

Ng, W.K. ; Tan, C.H. ; Houston, P.A. ; Krysa, A.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK

Volume

152

Issue

2

fYear

2005

fDate

4/8/2005 12:00:00 AM

Firstpage

140

Lastpage

144

Abstract

An evanescently coupled side-illuminated waveguide phototransistor to improve on power handling and coupling efficiency over vertically illuminated photodetectors was demonstrated. The Al composition in the Al_xIn_(1-x-y)Ga_yAs passive waveguide was tailored for optimised optical confinement and coupling into the InGaAs absorption region. The presence of a passive waveguide as well as the internal transistor gain in the waveguide phototransistor showed an improvement in responsivity that was 300 times more than a p-i-n diode of similar structure to the base-collector junction.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; photodetectors; phototransistors; Al composition; Al_xIn_(1-x-y)Ga_yAs passive waveguide; InP-InGaAs; base-collector junction; coupling efficiency; evanescently coupled side-illuminated waveguide phototransistor; high current InP/InGaAs evanescently coupled waveguide phototransistor; internal transistor gain; optimised optical confinement; passive waveguide; power handling; responsivity; vertically illuminated photodetectors;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20045015

Filename

1425785