DocumentCode
794574
Title
Advantages of optical modulators with InGaAlAs/InGaAlAs MQW structure
Author
Shimizu, J. ; Aoki, M. ; Tsuchiya, T. ; Shirai, M. ; Taike, A. ; Ohtoshi, T. ; Tsuji, S.
Author_Institution
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Volume
38
Issue
15
fYear
2002
fDate
7/18/2002 12:00:00 AM
Firstpage
821
Lastpage
822
Abstract
An optical modulator based on an InGaAlAs/InGaAlAs multiple quantum well (MQW) structure is demonstrated. The fabricated device had an extinction ratio 6 dB higher than that of a conventional InGaAsP-based device with similar chirp behaviour. The InGaAlAs MQW effectively improved the performance trade-off between the extinction ratio and chirping parameter
Keywords
III-V semiconductors; aluminium compounds; chirp modulation; gallium arsenide; indium compounds; optical communication equipment; optical modulation; quantum well devices; InGaAlAs-InGaAlAs; InGaAlAs/InGaAlAs; MQW structure; chirp behaviour; chirping parameter; extinction ratio; optical modulators; performance trade-off;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020551
Filename
1021865
Link To Document