Title :
Advantages of optical modulators with InGaAlAs/InGaAlAs MQW structure
Author :
Shimizu, J. ; Aoki, M. ; Tsuchiya, T. ; Shirai, M. ; Taike, A. ; Ohtoshi, T. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fDate :
7/18/2002 12:00:00 AM
Abstract :
An optical modulator based on an InGaAlAs/InGaAlAs multiple quantum well (MQW) structure is demonstrated. The fabricated device had an extinction ratio 6 dB higher than that of a conventional InGaAsP-based device with similar chirp behaviour. The InGaAlAs MQW effectively improved the performance trade-off between the extinction ratio and chirping parameter
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; gallium arsenide; indium compounds; optical communication equipment; optical modulation; quantum well devices; InGaAlAs-InGaAlAs; InGaAlAs/InGaAlAs; MQW structure; chirp behaviour; chirping parameter; extinction ratio; optical modulators; performance trade-off;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020551
