Title :
Low-stress nitride as oxidation mask for submicrometre LOCOS isolation
Author :
van Zeijl, H.W. ; Nanver, L.K. ; French, P.J.
Author_Institution :
Delft Univ. of Technol., Netherlands
fDate :
5/25/1995 12:00:00 AM
Abstract :
A large reduction in the LOCOS bird´s beak is obtained by using a thick silicon nitride layer as an oxidation mask. Stress induced damage of the devices is avoided by using low-stress silicon-rich nitride
Keywords :
isolation technology; masks; oxidation; silicon compounds; SiN; bird beak reduction; low-stress nitride; oxidation mask; submicrometre LOCOS isolation; submicron isolation; thick nitride layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950626
