• DocumentCode
    794582
  • Title

    Low-stress nitride as oxidation mask for submicrometre LOCOS isolation

  • Author

    van Zeijl, H.W. ; Nanver, L.K. ; French, P.J.

  • Author_Institution
    Delft Univ. of Technol., Netherlands
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    927
  • Lastpage
    929
  • Abstract
    A large reduction in the LOCOS bird´s beak is obtained by using a thick silicon nitride layer as an oxidation mask. Stress induced damage of the devices is avoided by using low-stress silicon-rich nitride
  • Keywords
    isolation technology; masks; oxidation; silicon compounds; SiN; bird beak reduction; low-stress nitride; oxidation mask; submicrometre LOCOS isolation; submicron isolation; thick nitride layer;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950626
  • Filename
    390898
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794582