• DocumentCode
    794590
  • Title

    High-barrier Pt/Al/n-InP diode

  • Author

    Huang, Wen Chang ; Lei, Tan Fu ; Lee, Chung Len

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    924
  • Lastpage
    925
  • Abstract
    A new Pt/Al/n-InP contact diode which has a good l-V characteristic is studied. It has a barrier height of 0.74 eV which increases to 0.99 eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5×108 A/cm2 at -3 V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface
  • Keywords
    III-V semiconductors; Schottky diodes; aluminium; indium compounds; leakage currents; passivation; platinum; semiconductor-metal boundaries; F surface passivation; HF; Pt-Al-InP; Pt/Al/n-InP contact diode; barrier height; high-barrier diode; ideality factor; interfacial oxide layer formation; l-V characteristic; reverse leakage current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950614
  • Filename
    390899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794590