Title :
High-barrier Pt/Al/n-InP diode
Author :
Huang, Wen Chang ; Lei, Tan Fu ; Lee, Chung Len
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
5/25/1995 12:00:00 AM
Abstract :
A new Pt/Al/n-InP contact diode which has a good l-V characteristic is studied. It has a barrier height of 0.74 eV which increases to 0.99 eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5×108 A/cm2 at -3 V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface
Keywords :
III-V semiconductors; Schottky diodes; aluminium; indium compounds; leakage currents; passivation; platinum; semiconductor-metal boundaries; F surface passivation; HF; Pt-Al-InP; Pt/Al/n-InP contact diode; barrier height; high-barrier diode; ideality factor; interfacial oxide layer formation; l-V characteristic; reverse leakage current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950614
