Title :
High performance GaAs JFET with shallow implanted Cd-gate
Author :
Zolper, J.C. ; Baca, A.G. ; Sherwin, M.E. ; Shul, R.J.
Author_Institution :
Dept. of Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
5/25/1995 12:00:00 AM
Abstract :
Shallow p+-regions in GaAs, formed by Cd ion implantation, have been used as the gate region for GaAs JFETs. 0.7 μm gate length JFETs demonstrated a transconductance of 165 mS/mm a saturation current of 130 mA/mm, an ft of 26 GHz, and an f max of 42 GHz. These frequency metrics are superior to previous Zn-gate JFETs of similar dimensions
Keywords :
III-V semiconductors; cadmium; gallium arsenide; ion implantation; junction gate field effect transistors; 0.7 micron; 165 mS/mm; 26 GHz; 42 GHz; Cd ion implantation; GaAs:Cd; JFET; saturation current; shallow implanted Cd-gate; shallow p+-regions; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950596
