• DocumentCode
    794620
  • Title

    High performance GaAs JFET with shallow implanted Cd-gate

  • Author

    Zolper, J.C. ; Baca, A.G. ; Sherwin, M.E. ; Shul, R.J.

  • Author_Institution
    Dept. of Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    923
  • Lastpage
    924
  • Abstract
    Shallow p+-regions in GaAs, formed by Cd ion implantation, have been used as the gate region for GaAs JFETs. 0.7 μm gate length JFETs demonstrated a transconductance of 165 mS/mm a saturation current of 130 mA/mm, an ft of 26 GHz, and an f max of 42 GHz. These frequency metrics are superior to previous Zn-gate JFETs of similar dimensions
  • Keywords
    III-V semiconductors; cadmium; gallium arsenide; ion implantation; junction gate field effect transistors; 0.7 micron; 165 mS/mm; 26 GHz; 42 GHz; Cd ion implantation; GaAs:Cd; JFET; saturation current; shallow implanted Cd-gate; shallow p+-regions; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950596
  • Filename
    390900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794620