Title :
GaN MOSFET with liquid phase deposited oxide gate
Author :
Lee, Kuan-Wei ; Chou, Dei-Wei ; Wu, Hou-Run ; Huang, Jian-Jun ; Wang, Yeong-Her ; Houng, Mau-Phon ; Chang, Sou-Jim ; Su, Yan-Kuin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/18/2002 12:00:00 AM
Abstract :
Liquid phase deposited SiO2 as the insulating gate on an n-channel depletion mode GaN MOSFET is demonstrated. For a device with a 13 μm source-to-drain distance and gate metal of 8 × 40 μm2, a transconductance of 48 mS/mm and a drain current of 250 mA/mm at Vgs = 4 V and Vds = 20 V can be achieved
Keywords :
III-V semiconductors; MOSFET; gallium compounds; leakage currents; liquid phase deposition; semiconductor device measurement; wide band gap semiconductors; 13 micron; 20 V; 4 V; 48 mS/mm; GaN MOSFET; GaN-SiO2; drain current; gate leakage current; gate metal; liquid phase deposited SiO2; liquid phase deposited oxide gate; n-channel depletion mode MOSFET; source-to-drain distance; swing voltage; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020543
