• DocumentCode
    794642
  • Title

    Inversion channel vertical cavity double heterostructure optoelectronic switch lasers

  • Author

    Evaldsson, P.A. ; Taylor, G.W. ; Cooke, P. ; Jiang, S.

  • Author_Institution
    R. Inst. of Technol., Stockholm, Sweden
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    920
  • Lastpage
    921
  • Abstract
    Inversion channel technology provides a straightforward way to integrate lasers with detectors and transistors. One inversion channel laser is the double heterostructure optoelectronic switch VCSEL which is reported here with a 2.1 mA threshold for a 10 μm diameter device. A deposited stack of SiO2/TiO2 was used with post-growth etching of the cavity. Excellent electrical switching parameters or Vsh=13 V, Vh=2.1 V and Ih=0.5 mA were obtained, making the device suitable for the digital optoelectronic sensing of small optical inputs
  • Keywords
    inversion layers; optical switches; semiconductor lasers; semiconductor switches; surface emitting lasers; 10 micron; 2.1 mA; DOES VCSEL; SiO2-TiO2; SiO2/TiO2 stack; detectors; digital optoelectronic sensing; electrical switching; integration; inversion channel technology; post-growth etching; transistors; vertical cavity double heterostructure optoelectronic switch lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950581
  • Filename
    390902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=794642