Title :
High gain resonant cavity enhanced InGaAs/AlGaAs heterojunction phototransistor resonant at 930 nm
Author :
Sjölund, O. ; Ghisoni, M. ; Larsson, A.
Author_Institution :
Dept. of Optoelectron. & Electr. Meas., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
5/25/1995 12:00:00 AM
Abstract :
A resonant cavity enhanced InGaAs/AlGaAs phototransistor with high responsivity in the transmission window of the GaAs substrate is reported. The resonant wavelength is 929 nm with a full width at half maximum of 9 nm. The peak responsivity increases from 17 A/W at 0.1 μW incident optical power to 400 A/W at 100 μW
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical resonators; phototransistors; 0.1 to 100 muW; 930 nm; FWHM; GaAs; GaAs substrate; InGaAs-AlGaAs; InGaAs/AlGaAs heterojunction phototransistor; gain; resonant cavity; resonant wavelength; responsivity; transmission window;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950602
