Fabrication of InGaP/Al/sub 0.98/Ga/sub 0.02/As/GaAs oxide-confined collector-up heterojunction bipolar transistors

Author

Chen, W.B. ; Su, Y.K. ; Lin, C.L. ; Wang, H.C. ; Chen, S.M. ; Su, J.Y. ; Wu, M.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

24

Issue

10

fYear

2003

Firstpage

619

Lastpage

621

Abstract

A partially oxidized Al/sub 0.98/Ga/sub 0.02/As layer was introduced between the emitter and base of collector-up heterojunction bipolar transistors (C-up HBTs) to suppress the leakage current and improve the current gain. Dependence of device current gain and leakage current on oxidation temperature was investigated. At lower oxidation temperature, the current gain can be effectively improved. Current gain and base sheet resistance were 79 and 203 ohm/sq. for the C-up HBT oxidized at 400/spl deg/C.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; leakage currents; oxidation; semiconductor technology; 400 degC; HBT fabrication; InGaP-Al/sub 0.98/Ga/sub 0.02/As-GaAs; current gain improvement; leakage current suppression; oxidation temperature; oxide-confined collector-up HBTs; partially oxidized AlGaAs layer; Councils; Etching; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Oxidation; Parasitic capacitance; Temperature dependence; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2003.817611

Filename

1233933