DocumentCode
794795
Title
Metal-induced lateral crystallization of a-Si thin films by Ni-Co alloys and the electrical properties of poly-Si TFTs
Author
Yoon, Yeo-Geon ; Kim, Min-Sun ; Kim, Gi-Bum ; Joo, Seung-Ki
Author_Institution
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea
Volume
24
Issue
10
fYear
2003
Firstpage
649
Lastpage
651
Abstract
We have introduced a new process in metal-induced lateral crystallization (MILC). By adding Co to the Ni-MILC process, the electrical characteristics of MILC poly-Si TFTs were considerably improved. In particular, a considerable decrease of TFT leakage current were achieved in both n-type and p-type devices.
Keywords
amorphous semiconductors; cobalt alloys; crystallisation; elemental semiconductors; leakage currents; nickel alloys; semiconductor thin films; silicon; thin film transistors; Ni-Co; Ni-Co alloy; Si; a-Si thin film; electrical properties; leakage current; metal-induced lateral crystallization; polysilicon TFT; Annealing; Cobalt alloys; Crystallization; Glass; Leakage current; Liquid crystal displays; Liquid crystals; Nickel alloys; Sputtering; Thin film transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.817610
Filename
1233943
Link To Document