An analytical model to project MOS transistor lifetime improvement by deuterium passivation of interface traps

Based on the hydrogen/deuterium (H/D) isotope effect in interface trap generation and the power law that is widely used to describe the hot-carrier degradation of MOS transistors, a universal model is developed to project the hot-carrier lifetime improvement of MOS transistors by deuterium (D) passivation of interface traps. The validity of this model is verified by comparing its predication with the experimental measurements. The result indicates that the lifetime improvement increases more than exponentially as the D passivation fraction increases.