Title :
Bistable gated bipolar device
Author :
Duane, Russell ; Mathewson, Alan ; Concannon, Ann
Author_Institution :
NMRC, Univ. Coll., Cork, Ireland
Abstract :
We report a semiconductor device that exhibits a negative differential resistance characteristic. The device has the same structure as metal-oxide-semiconductor (MOS) transistors currently used in integrated circuits. Biasing the structure in the subthreshold regime and sweeping the bulk bias results in the negative differential resistance characteristic. The device exhibits a peak valley current ratio of approximately 52 at room temperature while drawing ten nanoampers of current which is of sufficiently low power for ultra-large scale integration (ULSI) applications.
Keywords :
bipolar transistors; negative resistance devices; MOS transistor; ULSI; bistable gated bipolar device; integrated circuit; negative differential resistance; peak valley current ratio; semiconductor device; CMOS memory circuits; CMOS process; CMOS technology; Current measurement; Electrical resistance measurement; MOSFET circuits; Semiconductor devices; Temperature; Threshold voltage; Ultra large scale integration;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.817374
