Title :
Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation
Author :
Yang, G.M. ; MacDougal, M.H. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
5/25/1995 12:00:00 AM
Abstract :
The authors report InGaAs single quantum well vertical-cavity surface-emitting lasers with an intracavity p-contact fabricated by selective oxidation of AlAs and distributed Bragg reflectors composed of binary materials (AlAs/GaAs). Record low threshold currents of 8.7 μA in ~3 μm square devices and 140 μA in 10 μm square devices with maximum output powers over 1.2 mW are achieved
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; oxidation; quantum well lasers; surface emitting lasers; 1.2 mW; 10 micron; 140 muA; 3 micron; 8.7 muA; InGaAs; distributed Bragg reflectors; intracavity p-contact; maximum output powers; selective oxidation; single quantum well; ultralow threshold current; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950610
