Title :
Singlemode InGaAsP Fabry-Perot lasers at absolute predetermined wavelengths by intracavity Er3+-doped single crystal absorptions
Author :
Auzel, F. ; Gautier, C.
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
fDate :
5/25/1995 12:00:00 AM
Abstract :
By shaping the gain curve of a multimode Fabry-Perot (FP) laser with an intracavity Er3+:LiYF4 absorption, singlemode selection with 40 and 36 dB rejection ratios is obtained for absolute emission wavelengths at 1515.4 and 1548.9 nm. The wavelength depends essentially on the internal crystal field at the Er3+ site, whereas other wavelengths are predetermined by combinations with an Er3+-doped YAG crystal
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser frequency stability; laser modes; light absorption; semiconductor lasers; 1515.4 nm; 1548.9 nm; Er3+-doped YAG crystal; InGaAsP; LiYF4:Er; YAG:Er; YAl5O12:Er; YLF:Er; absolute emission wavelengths; absolute predetermined wavelengths; gain curve shaping; internal crystal field; intracavity Er3+-doped single crystal absorptions; intracavity Er3+:LiYF4 absorption; multimode Fabry-Perot laser; rejection ratios; singlemode InGaAsP Fabry-Perot lasers; singlemode selection;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950632
