• DocumentCode
    795230
  • Title

    Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

  • Author

    Chen, K.J. ; Maezawa, K. ; Arai, K. ; Yamamoto, M. ; Enoki, T.

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    31
  • Issue
    11
  • fYear
    1995
  • fDate
    5/25/1995 12:00:00 AM
  • Firstpage
    925
  • Lastpage
    927
  • Abstract
    A new approach to reducing the source resistance in InP-based InAlAs-InGaAs enhancement-mode HEMTs is developed using Pt-based buried-gate technology. Source resistance as small as 0.2 Ωmm is obtained, which results in an excellent transconductance of 1170 mS/mm for a 0.5 μm long gate enhancement-mode HEMT
  • Keywords
    III-V semiconductors; electric resistance; high electron mobility transistors; indium compounds; platinum; semiconductor technology; 0.5 micron; 1170 mS/mm; InAlAs-InGaAs; Pt; Pt-based buried-gate technology; enhancement-mode HEMTs; high speed digital applications; source resistance; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950603
  • Filename
    390958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=795230